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HIGH-VOLTAGE MONOLITHIC IC
ECN3021
ECN3021 is a single chip three-phase bridge inverter IC which has 6 IGBTs in the circuit. Especially, it is very suitable for controlling the speed of 3-phase DC brushless motors to which converted AC200~230V power supplies are applied. Fig. 1 shows the internal block diagram. Functions Integrated charge pump circuit Integrated free wheel diodes Integrated PWM circuit Integrated FG circuit Integrated over current protection circuit Integrated rotating direction monitor circuit
Features Speed control for a 3-phase DC brushless motor is available with an external microprocessor. Bottom arm circuits can be operated in 20kHz chopping frequency of PWM.
RU
D2 VCC(15V) C0 CB HU VB VB supply Clock HV HW C+
RV RW
D1 + -
VS
C2 +-
C1
C-
CL
VS1
VS2
VCC
Charge Pump
FG FG DM Rotating Direction Monitor
Top Arm Driver 3-Phase Distributor Bottom Arm Driver
Over Current Sense
Clock + Vref 0.5V RS GH1 GH2
Hall ICs
MU MV MW
Microprocessor Analog output
VSP
Comparator
+ CMP -
Motor
SAW wave Generator
CR RTR CTR
VTR
GL
RS
Fig. 1 Block diagram
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PDE-3021-0
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ECN3021
1. General (1) Type (2) Application (3) Structure (4) Package ECN3021 3-phase DC Brushless Motor Monolithic IC SP-23T 2. Maximum Allowable Ratings (Ta=25C) No. Items Symbols 1 Output Device VSM Breakdown Voltage 2 Supply Voltage VCC 3 Input Voltage VIN 4 5 6 Terminal VS1,VS2 MU,MV,MW VCC VSP,RS HU,HV,HW MU,MV,MW MU,MV,MW MU,MV,MW Ratings 500 18 -0.5 ~ VB+0.5 Unit V V V Condition
Output Current IMDC 0.7 A Peak Output Current IMP 1.0 A Note Output Current in Start IOM 1.0 A Note Up and Accelerating Note 7 Operating Junction Tjop C -20 ~ +135 Temperature 8 Storage Temperature Tstg C -40 ~ +150 Note 1. Please note that acumulated duty of a period exceeding 0.7A has to be less than 5% of flowing period. Note 2. Thermal Resistance Rj-c = 4C/W Rj-a = 40C/W 3.
1 1 2
total current
Recommended Operating Conditions No. Items Symbols Terminal MIN TYP MAX Unit Condition 1 Supply Voltage VS VS1,2 50 325 370 V 2 VCC VCC 13.5 15 16.5 V Note. Recommended Safe Operating Area(SOA) It is recommended that this IC should be used within the SOA as shown below, where IM and VM are the current and the voltage at the terminals connected to motor coils when the phase is changed (turned off).
1.0 IM (A) Safe Operating Area
0 0 VM (V) 370
PDE-3021-0
ECN3021
4. Electrical Characteristics (Ta=25C) Unless otherwise specified, VCC=15V, VS=325V Suffix T; Top arm No. Items Symbols Terminal MIN TYP MAX Unit 1 Standby Current IS VS1,2 2.5 5.0 mA 2 ICC VCC 10 20 mA 3 Output device FVD VFT MU,MV,MW 4.0 6.0 V 4 VFB MU,MV,MW 4.0 6.0 V 5 Turn On TdONT MU,MV,MW 0.5 3.0 s 6 Delay Time TdONB MU,MV,MW 0.5 3.0 s 7 Turn Off TdOFFT MU,MV,MW 3.0 6.0 s 8 Delay Time TdOFFB MU,MV,MW 1.0 3.0 s 9 Free Wheel VFDT MU,MV,MW 4.0 6.0 V 10 Diode FVD VFDB MU,MV,MW 4.0 6.0 V 11 Output Resistance RVTR VTR 200 400 12 H or L Level of VSAWH CR 4.9 5.4 6.1 V 13 SAW wave VSAWL CR 1.7 2.1 2.5 V 14 Amplitude of VSAWW CR 2.8 3.3 3.8 V SAW wave 15 Reference Voltage Vref RS 0.45 0.5 0.55 V 16 Hall signal VIH HU,HV,HW 3.5 V 17 Input Voltage VIL HU,HV,HW 1.5 V 18 Hall signal IIL HU,HV,HW -100 A Input Current 19 VSP Input Current IVSPH VSP 100 A B; Bottom arm Condition VSP=0V I=0.35A I=0.35A I=0.35A Resistance Load I=0.35A
Note 2 Note 3
HU,HV,HW=0V Note 1
Pull Up Resistance
VSP=5.0V
Note 1
Pull Down Resistance
20 VB Output Voltage VB CB 6.8 7.5 8.2 V 21 VB Output Current IB CB 25 mA 22 FG,DM VOL FG,DM 1.0 V Output Voltage 23 FG,DM ROL FG,DM 200 400 Output Resistance 24 LVSD Output Voltage LVSDON Vcc,MU, 10.0 11.5 12.9 V 25 LVSD recover Voltage LVSDOFF MV,MW 10.1 12.0 13.0 V 26 LVSD reset hysterisis Vrh 0.1 0.5 0.9 V Note 1. Pull Up Resistance and Pull Down Resistance are typically 200 k. Note 2. Please see Note 2 in item 6 for determining the frequency of SAW wave. Note 3. The amplitude of SAW(VSAWW) is determined by the following equation, VSAWW=VSAWH-VSAWL (V) Note 4. The equivalent circuit around FG and DM terminal is shown in Fig. 2 Note 5. LVSD: Low Voltage Shut Down
VCC
delta Vload=0.1V IOL=-5mA Note 4
Note.5
FG or DM
Fig.2 Equivalent circuit around FG or DM
PDE-3021-0
ECN3021
5. Function 5.1 Truth Table HU H H H L L L L H Input HV L L H H H L L H MU HW H L L L H H L H Top OFF OFF OFF ON ON OFF OFF OFF Bottom ON ON OFF OFF OFF OFF OFF OFF Top ON OFF OFF OFF OFF ON OFF OFF MV Bottom OFF OFF ON ON OFF OFF OFF OFF Top OFF ON ON OFF OFF OFF OFF OFF MW Bottom OFF OFF OFF OFF ON ON OFF OFF
5.2
Timing Chart
HU
Input
HV HW
MU Output
MV Output
MW Output FG Output
PDE-3021-0
ECN3021
5.3 PWM Operation The PWM signal is produced by comparing the input voltage at VSP terminal with the voltage from the internal SAW wave. The duty of the PWM signal can be changed by the triangular wave amplitude level, from the minimum point of VSAWL to the maximum point of VSAWH, and when the level is under VSAWL, the duty becomes 0%, and when the level is over VSAWH, the duty becomes 100%. In addition, chopping with the PWM signal is operated in the bottom arm circuit. 5.4 Over Current Limiting Operation This IC detects over current by checking the voltage drop at the external resistance RS. When the input voltage at RS terminal exceeds the internal reference voltage(Vref), this IC turns off the output of the bottom arm circuit. After over current detection, reset operation is done at every period of the inner clock signal (VTR terminal). 5.5 Rotating Direction Sense Operation The rotation direction of the motor is detected by the signal at DM terminal. Table 1 shows the output signal for the rotation direction. Table 1. Output signal for the rotation direction Rotating Direction Output (DM terminal) U-V-W L U-W-V H
5.6 Vcc under voltrage Detection When Vcc supply voltage becomes below LVSDON(11.5V typ), all of the IGBTs shut off. This condition is recovered when Vcc supply voltage becomes greater than LVSDOFF(12.0V typ).
PDE-3021-0
ECN3021
6. Standard Application Component Recommended Value C0 More than 0.22 F C1,C2 D1,D2 Usage for inner power supply(VB). for charge pump 0.5 F 20% Hitachi DFG1C6(glass mold) for charge pump Hitachi DFM1F6(resin mold) or equivalent parts Note 1. for current limiting Remark stress voltage is VB stress voltage is VCC 600V/1.0A trr100ns
Rs
CTR for PWM Note 2. 1800 pF 5% RTR for PWM Note 2. 22 k 5% Note 1. Start up current is limited by the following equation. IO = Vref / Rs (A) Note 2. PWM frequency is approximately determined by the following equation. fPWM = -1 / (2C*R*Ln(1-3.5/5.5)) ; Ln is natural logarithm = 0.494 / (C*R) (Hz) Note 3. It is recommended that RU,RV,RW should be 5.6 k 5%.
RU
VCC(15V) C0 CB
RV RW
D2 C2 +HU HV HW
D1 + -
VS
C1
C+
C-
CL
VS1
VS2
VCC VB supply FG
VB Clock
Charge Pump
FG DM Rotating Direction Monitor
Top Arm Driver 3-Phase Distributor Bottom Arm Driver
Over Current Sense
Clock + Vref 0.5V RS GH1 GH2
Hall ICs
MU MV MW
Microprocessor Analog output
VSP
Comparator
+ CMP -
Motor
SAW wave Generator
CR RTR CTR
VTR
GL
RS
Fig 3. Block diagram and external elements
PDE-3021-0
ECN3021
7. Terminal
23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
MV VS1 MU GH1 RS HU HV HW DM FG VSP VTR CR CB CL CC+ GL VCC GH2 MW VS2
(Marking side)
Fig.4 Pin Connection
8.
Package
Outline
ECN3021SP
ECN3021SPV
ECN3021SPR
PDE-3021-0
ECN3021
8. Package Dimensions (1) ECN3021SP
(2) ECN3021SPV
PDE-3021-0
ECN3021
(3) ECN3021SPR
31MAX (30) 28 20 0.5 0.2
0.2 0.3 0.2
3.5 0.3 3.6
0.2
1.26
0.24
14.7MAX
11.2 0.3
12.30.5 2.20.3
1.23
0.25
0.6 0.1 23.970.3
4.90.5
1.27
0.5
2.54
0.5
2.54
0.5
7.10.5
+10 0 -0
1
23
+10 0 -0 0.25 typ
4.1 0.3 (7.7) (9)
3.6
1.8 typ
PDE-3021-0
HITACHI POWER SEMICONDUCTORS Notices
1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse

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